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NTS4001N, NVS4001N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 100 m A
30
60
V
mV/ ° C
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
I DSS
I GSS
V GS = 0 V, V DS = 30 V
V DS = 0 V, V GS = ± 10 V
1.0
± 1.0
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 100 m A
0.8
1.2
1.5
V
Gate Threshold
Temperature Coefficient
V GS(TH) /T J
? 3.4
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.0 V, I D = 10 mA
1.0
1.5
W
V GS = 2.5 V, I D = 10 mA
1.5
2.0
Forward Transconductance
g FS
V DS = 3.0 V, I D = 10 mA
80
mS
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
20
33
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 5.0 V
19
7.25
32
12
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 5.0 V, V DS = 24 V,
I D = 0.1 A
0.9
0.2
0.3
0.2
1.3
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
td (ON)
17
ns
Rise Time
Turn ? Off Delay Time
Fall Time
tr
td (OFF)
tf
V GS = 4.5 V, V DD = 5.0 V,
I D = 10 mA, R G = 50 W
23
94
82
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 mA
T J = 25 ° C
T J = 125 ° C
0.65
0.43
0.7
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 8.0 A/ m s,
I S = 10 mA
5.0
ns
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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